CHARACTERIZATION OF SNO2-BASED H-2 GAS SENSORS FABRICATED BY DIFFERENT DEPOSITION TECHNIQUES

Citation
Sg. Ansari et al., CHARACTERIZATION OF SNO2-BASED H-2 GAS SENSORS FABRICATED BY DIFFERENT DEPOSITION TECHNIQUES, Journal of materials science. Materials in electronics, 8(1), 1997, pp. 23-27
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
8
Issue
1
Year of publication
1997
Pages
23 - 27
Database
ISI
SICI code
0957-4522(1997)8:1<23:COSHGS>2.0.ZU;2-X
Abstract
Thick and thin films of SnO2 are extensively used for resistive gas se nsors. Characteristics are compared for films produced by four differe nt techniques - chemical vapour deposition (CVD), spray pyrolysis, vac uum evaporation and screen printing. The films are characterized for H p sensing only, using a static measurement system to investigate their temperature selectivity. The samples are tested at a concentration of 300 p.p.m. H-2 gas, a typical value for comparison. No selective peak is observed for CVD and spray deposited samples, and the selective pe ak for vacuum evaporated samples has a low sensitivity. But the select ive peak for screen printed samples has a sensitivity of 55% (delta R/ R(air)). And what is more, the screen printed samples have a repeatabl e response.