LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS

Citation
Ar. Brown et al., LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS, Science, 270(5238), 1995, pp. 972-974
Citations number
11
Categorie Soggetti
Multidisciplinary Sciences
Journal title
ISSN journal
00368075
Volume
270
Issue
5238
Year of publication
1995
Pages
972 - 974
Database
ISI
SICI code
0036-8075(1995)270:5238<972:LGMFPT>2.0.ZU;2-K
Abstract
Metal-insulator-semiconductor field-effect transistors have been fabri cated from polymer semiconductors that can be processed from solution. The performance of these transistors is sufficient to allow the const ruction of simple logic gates that display voltage amplification. Succ essful coupling of these gates into ring oscillators demonstrates that these logic gates can switch subsequent gates and perform logic opera tions. The ability to perform logic operations is an essential require ment for the use of polymer-based transistors in low-cost low-end data storage applications.