DYNAMIC CHARACTERIZATION OF PHOTODETECTOR S PRODUCED USING III-V SEMICONDUCTORS WITH A PICOSECOND LASER

Authors
CONSTANT M BOUSSEKEY L PEREDO E DECOSTER D VILCOT JP GOUY JP
Citation
M. Constant et al., DYNAMIC CHARACTERIZATION OF PHOTODETECTOR S PRODUCED USING III-V SEMICONDUCTORS WITH A PICOSECOND LASER, Annales de physique, 20(2), 1995, pp. 77-79
Citations number
NO
Categorie Soggetti
Physics
Journal title
Annales de physique → ACNP
ISSN journal
00034169
Volume
20
Issue
2
Year of publication
1995
Supplement
S
Pages
77 - 79
Database
ISI
SICI code
0003-4169(1995)20:2<77:DCOPSP>2.0.ZU;2-M
Abstract
The purpose of this work is to use a picosecond laser to study the dyn amic characteristics of photodetectors fabricated with III-V materials . Measurements have been carried out on an interdigitated InAlAs/InGaA s/InP Metal-Semiconductor-Metal (MSM) photodiode and an interdigitated InGaAs/InP photoconductor. A comparison between the impulse response of the photoconductor and the one of the MSM photodiode has been discu ssed in terms of cut-off frequencies of these two devices.