AN IMPROVED MODEL FOR THE SLEWING BEHAVIOR OF OPAMPS

Authors
WANG F HARJANI R
Citation
F. Wang et R. Harjani, AN IMPROVED MODEL FOR THE SLEWING BEHAVIOR OF OPAMPS, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 42(10), 1995, pp. 679-681
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on circuits and systems. 2, Analog and digital signal processing → ACNP
ISSN journal
10577130
Volume
42
Issue
10
Year of publication
1995
Pages
679 - 681
Database
ISI
SICI code
1057-7130(1995)42:10<679:AIMFTS>2.0.ZU;2-N
Abstract
A new time-domain model for the slewing behavior of two stage opamps i s presented. This model includes the effects of the load capacitance, compensation capacitance, device sizes and the nonlinear behavior of t he transistors during the slewing period. This model improves on the c ommonly used constant current models and allows for more predictable d esigns. The model shows good agreement with simulations. Circuit desig n results using the traditional and new improved models are presented.