J. Bandet et al., RAMAN AND ELECTRICAL CHARACTERIZATIONS OF A-GAAS1-XNX THIN-FILMS GROWN ON C-SI(P) SUBSTRATES BY N-2 REACTIVE SPUTTERING, JPN J A P 1, 36(1A), 1997, pp. 11-18
In this paper, we report on electrical properties and Raman scattering
of amorphous GaAs1-xNx deposited on p-type crystalline silicon (c-Si(
p)) substrates. The aim of this study is the investigation of the diel
ectric character of GaAs1-xNx in view of its applications in MIS struc
tures. The ''compound'' GaAs1-xNx is obtained by reactive RF sputterin
g of a GaAs target. The electrical characteristics of the a-GaAs1-xNx/
c-Si(p) heterostructures present a MIS-like structure behaviour with s
ome imperfections. Raman scattering points out that a-GaAs1-xNx is a w
ide gap material which is formed by the substitution of arsenic by nit
rogen in the GaAs network. For substitution ratios below 25-30%, the m
aterial obtained would be an alloy whose vibrational behaviour is a si
ngle mode. Beyond 30%, it would be in a very inhomogeneous phase, infa
ct polyphased, and would present a phase of hexagonal origin (GaN).