SATURATION MEASUREMENTS OF ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON BASED THIN-FILM TRANSISTORS

The saturational broadening of an electrically detected magnetic reson ance signal in hydrogenated amorphous silicon has been observed in thi n-film transistor structures. It was found that broadening of the reso nance spectrum with increasing microwave power is caused by an enhance d local microwave field in the transistor due to strong coupling of th e microwave field with the microstrip-like structure of the transistor . The held enhancement factor, which was estimated from saturation mea surements, can reach 33 in a transistor with a channel width-to-length ratio of 500/10, demonstrating that the thin-film resonator is an eff ective tool for improving the detection sensitivity.