BORON IMPLANTATION INTO GAAS GA0.5IN0.5P HETEROSTRUCTURES/

The electrical effect of implantation of boron ions with energies from 100keV to 360keV into GaAs and Ga0.5In0.5P has been studied. The impl antation dose varied from 5 x 10(11) cm(-2) to 5 x 10(13) cm(-2). Resi stivities higher than 1 x 10(5) Omega cm for both n-type GaAs and n-ty pe GaInP were measured. C-V and breakdown voltage measurements were us ed to characterize the electrical properties of implanted n GaInP. GaI nP appears to be more sensitive to boron implantation than GaAs, and h igher resistivities can be obtained with lower boron doses. Boron impl antation at 200 keV followed by a 10-min annealing (T = 416 degrees C) generates a mid-gap trap level at 1.04 +/- 0.02 eV below the GaInP co nduction band for Q = 2 x 10(12) cm(-2) and a trap level at 0.92 +/- 0 .02 eV for Q = 5 x 10(12) cm(-2). Low-dose boron ion implantation can give rise to a GaInP passivation-like layer.