ELECTRONIC LOCALIZATION AND STRESS INHOMOGENEITY - FROM QUANTUM-WELLSTO COUPLED QUANTUM WIRES AND DOTS

In the present study the effects of inhomogeneously distributed stress are demonstrated and a possible method of obtaining an extremely shor t range lateral localisation is described. This is achieved by the gro wth of strained layer tilted structures and particular use is made of the growth of very narrow quantum wells on tilted substrates which pro vokes non-uniform stress fields. This locally modifies the band struct ure and may be used to increase the confinement in quantum wells, prod ucing coupled quantum wires and quantum dots on a very short scale. Th is has been carried out for InGaAs quantum wells grown on (001) GaAs s ubstrates and two tilting directions, toward (111) and (011), have bee n studied.