ANISOTROPIC EXCHANGE FOR NIFE FILMS GROWN ON EPITAXIAL NIO

We have investigated the anisotropic exchange field He and the coerciv e field He for NiFe films deposited on epitaxial NiO {111} and {100} f ilms grown by an MOCVD technique and for NiFe films deposited on polyc rystalline NiO grown by both MOCVD;and DC magnetron sputtering techniq ues, He and He were determined from MOKE hysteresis loops taken from r oom temperature to 300 degrees C, For NiFe deposited on epitaxial NiO {111} Hc approximate to 500-550 Oe and is isotropic; H approximate to 80-100 Oe, For NiFe deposited on epitaxial Nr {100} He and He are abou t half these values. For NiFe deposited on MOCVD polycrystalline films He was similar but He smaller and anisotropic, For NiFe deposited on the sputtered polycrystalline films He was larger, 150 Oe, and He stil l smaller, 125 Oe, and anisotropic.