PLASMA-ACTIVATED CHEMICAL-VAPOR-DEPOSITION OF BISMUTH-SUBSTITUTED IRON GARNETS FOR MAGNETOOPTICAL DATA-STORAGE

Polycrystalline garnet thin films were obtained on glass substrates by plasma-activated chemical vapor deposition followed by annealing at 6 70 degrees C, The single mixed precursor approach was used to achieve vaporization and transport of low-vapor-pressure powdered metalorganic precursors to a plasma reactor, Bi, Ga-substituted dysprosium iron ga rnet film showed a square Faraday hysteresis loop with a rotation of s imilar to 2 deg/mu m at 633 nm wavelength and low surface roughness of similar to 2 nm, which are favorable properties for high-density magn eto-optical data storage.