THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON

Recently, octahedron structures have been found in the Czochralski-sil icon substrate surface layer just under the oxide defects. An attempt is made to characterize these structures by analysis with transmission electron microscopy and energy-dispersive x-ray spectroscopy. Several results indicate that the structure is full of vacancies. This is con trary to previously reported results suggesting that the octahedron st ructures found in Si bulb are filled with amorphous SiO2. A modal for the formation of an octahedron structure with many vacancies is propos ed. (C) 1995 American Institute of Physics.