CONSISTENCY BETWEEN EXPERIMENTAL-DATA FOR AMBIPOLAR DIFFUSION LENGTH AND FOR PHOTOCONDUCTIVITY WHEN INCORPORATED INTO THE STANDARD DEFECT MODEL FOR A-SI-H

Reasonable consistency between experimental data for the ambipolar dif fusion length and experimental data for the photoconductivity is demon strated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the ''standard'' defect model for a- Si:H. In this model the dangling bonds are taken into account, conside ring their amphoteric behavior and treating then as recombination cent ers, whereas the band tails are taken into account as simple two-value d defects acting as traps. Consistency is obtained based on (1) a part icular form of the recombination function such as is considered approp riate for the dangling bonds, as well as, additionally, (2) the local charge neutrality condition. The experimental data analyzed are power laws of the ambipolar diffusion length and of the photoconductivity (v ersus light intensity); they are obtained for a series of slightly p a nd n-doped samples including the undoped case. (C) 1995 American Insti tute of Physics.