ELECTRON-PHONON INTERACTION AND TUNNELING ESCAPE PROCESS IN GAAS ALASQUANTUM-WELLS/

Authors
HERNANDEZCABRERA A ACEITUNO P CRUZ H
Citation
A. Hernandezcabrera et al., ELECTRON-PHONON INTERACTION AND TUNNELING ESCAPE PROCESS IN GAAS ALASQUANTUM-WELLS/, Journal of applied physics, 78(10), 1995, pp. 6147-6150
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
10
Year of publication
1995
Pages
6147 - 6150
Database
ISI
SICI code
0021-8979(1995)78:10<6147:EIATEP>2.0.ZU;2-S
Abstract
In this work, we have numerically integrated in space and time the eff ective mass Schrodinger equation for an electron in a GaAs/AlAs quantu m well. Considering the electron-phonon interaction and an external el ectric held, we have studied the electronic tunneling escape process f rom semiconductor quantum wells. In this way, electronic lifetimes hav e been obtained at different well widths and applied electric fields. (C) 1995 American Institute of Physics.