An easy and very reproducible method to produce porous silicon by ligh
t-stimulated etching of crystalline silicon in HF is described, and th
e formation mechanism is discussed in terms of carrier diffusion and b
and bending near the surface. The method avoids the use of electrodes
and electrochemical etching. The photosynthesized porous silicon shows
bright photoluminescence. Spectra recorded at room temperature for n-
type as well as p-type silicon are presented. (C) 1995 American Instit
ute of Physics.