QUANTITATIVE ASPECTS OF THE DESORPTION OF COPPER FROM THE SILICON(100) SURFACE

The desorption of copper from copper contaminated Si(100) samples has been investigated by thermal desorption spectroscopy (TDS). The sample s have been contaminated with aqueous CuSO4/EDTA solutions. The amount of copper deposited on the Si surface was in the monolayer region as determined by means of ratio-tracer experiments. The copper is adsorbe d on the sample sur face in two different states, which could be resol ved by TDS. By means of STM and XPS measurements it was possible to as sign these two desorption peaks to the desorption of copper from carbo n deposits, which had already been present before the contamination pr ocess, and to the desorption of copper from the bare Si surface.