COMBINED NRA, CHANNELING-RES AND FTIR ELLIPSOMETRY ANALYSES FOR THE DETERMINATION OF THE INTERFACE AND BONDING STATE OF THIN SIOX AND SINXOY LAYERS

Authors
MICHELMANN RW BAUMANN H MARKWITZ A MEYER JD ROSELER A KRIMMEL EF BETHGE K
Citation
Rw. Michelmann et al., COMBINED NRA, CHANNELING-RES AND FTIR ELLIPSOMETRY ANALYSES FOR THE DETERMINATION OF THE INTERFACE AND BONDING STATE OF THIN SIOX AND SINXOY LAYERS, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 403-407
Citations number
16
Categorie Soggetti
Chemistry Analytical
Journal title
Fresenius' journal of analytical chemistry → ACNP
ISSN journal
09370633
Volume
353
Issue
3-4
Year of publication
1995
Pages
403 - 407
Database
ISI
SICI code
0937-0633(1995)353:3-4<403:CNCAFE>2.0.ZU;2-F
Abstract
The molecular ions O-2(+) and NO+ are implanted at room temperature in to single-crystal silicon with an energy of E = 6 keV/atom at fluences ranging from 2.5 x 10(16) to 3.5 x 10(17) at/cm(2). The samples are p rocessed by electron beam rapid thermal annealing at 1100 degrees C fo r 15 s. The depth distributions of the implanted specimens (O-18) are determined by nuclear reaction analyses using the reaction O-18(p,alph a)N-15. Channeling-RBS measurements are performed to obtain the interf ace structure between the implanted layer and the single-crystal Si su bstrate. The chemical bonding state of as-implanted and implanted-anne aled specimens is observed by FTIR ellipsometry measurements.