LASER-ABLATION DEPOSITION OF YIG-FILMS ON SEMICONDUCTOR AND AMORPHOUSSUBSTRATES

Citation
R. Karim et al., LASER-ABLATION DEPOSITION OF YIG-FILMS ON SEMICONDUCTOR AND AMORPHOUSSUBSTRATES, IEEE transactions on magnetics, 31(6), 1995, pp. 3485-3487
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
31
Issue
6
Year of publication
1995
Part
2
Pages
3485 - 3487
Database
ISI
SICI code
0018-9464(1995)31:6<3485:LDOYOS>2.0.ZU;2-G
Abstract
Yttrium Iron Garnet (YIG) films were grown on single crystal silicon, Coming glass, single crystal MgO and quartz substrates using pulsed la ser ablation techniques. Films were grown over a range of temperature, deposition rate, and oxygen partial-pressure conditions. Sample micro wave magnetic properties were deduced using ferromagnetic resonance (F MR) measurements, with the sample magnetic properties also being measu red. All films were polycrystalline, with as-grown films deposited at temperatures below 800 degrees C having a weak magnetization. Good mag netic and microwave magnetic properties were obtained after annealing the samples in atmosphere at temperatures above 720 degrees C. FMR lin ewidths of 55 Oe were measured on the annealed films on glass substrat es. We believe that: growth of thick films with these properties will be sufficient for many polycrystalline-based YIG devices.