A micromagnetic simulation of switching behavior in submicron nickel b
ars is presented, The bars were discretized into elements 10nm by 10nm
by 30nm deep. The switching field and switching mechanism were found
to have a strong dependence on the edge roughness of the bars. By incl
uding a rough edge, the switching field of the bars was reduced as muc
h as 40% and produced agreement with experimental determined values.