Tgsm. Rijks et al., INFLUENCE OF GRAIN-SIZE ON THE TRANSPORT-PROPERTIES OF NI80FE20 AND CU THIN-FILMS, IEEE transactions on magnetics, 31(6), 1995, pp. 3865-3867
The conductivity of sputtered Ta/Cu/Ta and Ta/Ni80Fe20/Ta thin films w
as measured for a film thickness ranging from 20 to 1500 Angstrom. The
measured data were analyzed using a semi-classical model for the elec
tron transport, that includes grain boundary scattering. It was found
that in these films grain boundaries are an important source of electr
on scattering, in Ni80Fe20 leading to an effective spin dependence of
the scattering which is considerably smaller than the intrinsic spin d
ependence of the scattering.