IMPROVED THERMAL-STABILITY OF COBALT SILICIDE FORMED BY ION-BEAM-ASSISTED DEPOSITION ON POLYSILICON

Authors
RAVESI S LAVIA F RAINERI V SPINELLA C
Citation
S. Ravesi et al., IMPROVED THERMAL-STABILITY OF COBALT SILICIDE FORMED BY ION-BEAM-ASSISTED DEPOSITION ON POLYSILICON, Applied surface science, 91(1-4), 1995, pp. 19-23
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
91
Issue
1-4
Year of publication
1995
Pages
19 - 23
Database
ISI
SICI code
0169-4332(1995)91:1-4<19:ITOCSF>2.0.ZU;2-Q
Abstract
The thermal stability of thin cobalt silicide films obtained by ion be am assisted deposition of Co on polycrystalline Si has been studied. A large improvement has been obtained depositing Co at 470 degrees C wi th an Ar+ beam energy of 1000 eV: no increase of the sheet resistance was observed until 1000 degrees C. The improvement has been connected to the stability of the CoSi2/polysilicon interface.