J. Teichert et al., COMPARISON OF COSI2 INTERCONNECTION LINES ON CRYSTALLINE AND NONCRYSTALLINE SILICON FABRICATED BY WRITING FOCUSED ION-BEAM IMPLANTATION, Applied surface science, 91(1-4), 1995, pp. 44-49
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
A focused beam of Co+ ions has been used to produce CoSi2 interconnect
s by means of ion beam synthesis. Investigations have been performed u
sing polysilicon, amorphous and crystalline silicon substrates. The in
fluence of implantation dose and annealing temperature on the resistiv
ity has been studied. For room temperature implantation and annealing
at 600 degrees C for 1 h, a resistivity of about 60 mu Omega . cm has
been obtained independent of the substrate type. The CoSi2 layers have
been found to be stable up to 700 degrees C. CoSi2 interconnects have
been fabricated on the sloped walls of 200 mu m deep anisotropically
etched grooves using a dynamic focus control of the focused ion beam.