COMPARISON OF COSI2 INTERCONNECTION LINES ON CRYSTALLINE AND NONCRYSTALLINE SILICON FABRICATED BY WRITING FOCUSED ION-BEAM IMPLANTATION

A focused beam of Co+ ions has been used to produce CoSi2 interconnect s by means of ion beam synthesis. Investigations have been performed u sing polysilicon, amorphous and crystalline silicon substrates. The in fluence of implantation dose and annealing temperature on the resistiv ity has been studied. For room temperature implantation and annealing at 600 degrees C for 1 h, a resistivity of about 60 mu Omega . cm has been obtained independent of the substrate type. The CoSi2 layers have been found to be stable up to 700 degrees C. CoSi2 interconnects have been fabricated on the sloped walls of 200 mu m deep anisotropically etched grooves using a dynamic focus control of the focused ion beam.