ANGULAR-DEPENDENCE OF THE MAGNETORESISTANCE OF TISI2 SINGLE-CRYSTALS

Citation
M. Affronte et al., ANGULAR-DEPENDENCE OF THE MAGNETORESISTANCE OF TISI2 SINGLE-CRYSTALS, Applied surface science, 91(1-4), 1995, pp. 98-102
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
91
Issue
1-4
Year of publication
1995
Pages
98 - 102
Database
ISI
SICI code
0169-4332(1995)91:1-4<98:AOTMOT>2.0.ZU;2-R
Abstract
We measured the transverse magnetoresistance Delta rho/rho of good qua lity TiSi2 single crystals at low temperatures (4.2 less than or equal to T less than or equal to 112 K) in magnetic fields up to 7.8 Tesla, Single crystals were produced by a modified Czochralski pulling techn ique and they have low residual resistivity (typically rho(4.2 K) = 0. 15 mu Omega . cm) and high residual resistance ratio (typically RRR > 50). The angular dependence of magnetoresistance shows either minima o r maxima when the magnetic field is parallel to the principal crystall ographic axes. At high fields (B > 1 T) we found that the magnetoresis tance has a magnetic field dependence weaker than the B-2 law expected for compensated metals. At 7.8 T, the values of omega(c) tau obtained are of the order of unity, The Kohler scaling rule is observed within three orders of magnitude of the reduced parameter B/rho (where rho i s the zero field resistivity measured between 4.2 and 112 K).