METALLURGICAL AND ELECTRICAL INVESTIGATION OF PT5NI95 SILICON INTERACTIONS/

The interaction processes between a dilute metallic alloy of PtNi thin films of various thicknesses, ranging from 20 to 200 nm, and single c rystal silicon have been investigated as a function of the annealing t emperature and time. He-4(+) Rutherford backscattering (RBS), Auger el ectron spectroscopy combined with Ar sputtering, TEM cross-section pic tures and X-ray diffraction have been used to investigate the formatio n of the various compounds, to measure their thicknesses and to follow the segregation and redistribution processes of the Pt atoms. The for ward I-V characteristics measured in Schottky diodes at various temper atures down to 100 K on samples annealed at selected temperature-time couples allow us to infer the composition and the uniformity of the si licon/silicide interface.