PRECURSOR DEVELOPMENT FOR THE CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM, COPPER AND PALLADIUM

Authors
GRAFE A HEINEN R KLEIN F KRUCK T SCHERER M SCHOBER M
Citation
A. Grafe et al., PRECURSOR DEVELOPMENT FOR THE CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM, COPPER AND PALLADIUM, Applied surface science, 91(1-4), 1995, pp. 187-191
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
91
Issue
1-4
Year of publication
1995
Pages
187 - 191
Database
ISI
SICI code
0169-4332(1995)91:1-4<187:PDFTCO>2.0.ZU;2-9
Abstract
The concept of ''molecular engineering'' has been employed to systemat ically influence the physical and chemical properties of metalorganic compounds with the aim of using them as precursors in CVD processes. A s a result of our studies the compounds tyl)(eta(2)-methylcyclopentadi enyl)aluminium(III), rt-butylisonitrile(eta-cyclopentadienyl)copper(I) , and thylallyl(hexafluoroacetylacetonato)-palladium(II) are presented as suitable precursors for CVD. CVD experiments carried out with thes e compounds yielded homogenous metal films without detectable carbon c ontamination at temperatures between 200 and 350 degrees C.