ASPECTS OF TIN AND TI DEPOSITION IN AN ECR PLASMA-ENHANCED CVD PROCESS

Tetrakis(dimethylamido) titanium (TDMAT) was used to deposit pure TiN at temperatures < 300 degrees C by introducing it into the downstream region of an electron cyclotron resonance (ECR) plasma using nitrogen as plasma gas. The mechanism of TiN formation from TDMAT was elucidate d with labeled nitrogen as plasma gas. Titanium was deposited on silic on at 500 degrees C using titanium tetrachloride (TiCl4) and a hydroge n ECR downstream plasma. The formation of titanium disilicide was conf irmed by X-ray photoelectron spectroscopy (XPS) after annealing the Ti film on silicon at 800 degrees C. After silicide formation, a TiN cap was deposited from TiCl4 and a nitrogen/hydrogen plasma gas mixture. The chlorine content of the film was less than 1 at%. Thus, the combin ation of the TiCl4 and TDMAT process is a possible approach for contac t level and upper level metallization