OHMIC CONTACTS TO P-TYPE 6H-SILICON CARBIDE

Authors
NENNEWITZ O SPIESS L BRETERNITZ V
Citation
O. Nennewitz et al., OHMIC CONTACTS TO P-TYPE 6H-SILICON CARBIDE, Applied surface science, 91(1-4), 1995, pp. 347-351
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
91
Issue
1-4
Year of publication
1995
Pages
347 - 351
Database
ISI
SICI code
0169-4332(1995)91:1-4<347:OCTP6C>2.0.ZU;2-Q
Abstract
An Al/Ti-ohmic contact to p-type 6H-SiC is described. Specific contact resistances were measured using the linear transmission line method [ 1] and varied between approximately 5 x 10(-4) and 5 X 10(-3) Omega . cm(2) at room temperature. CV measurements of as-deposited contacts an d those annealed at different temperatures will be presented.