ELECTRICAL CHARACTERISTICS OF ALUMINUM CONTACTS TO POROUS SILICON

Electrical properties of aluminum contacts to porous silicon (PS), whe n a PS layer was formed in different technological conditions on diffe rent silicon wafers, have been studied in this work. The possibility w as shown of creating ohmic contacts to PS with a transition-specific r esistivity equal to 8 X 10(-3)-1.2 X 10(-2) Omega . cm(2) by usage of n-type silicon substrates with conditions of low porosity and low resi stivity of porous material. The role of an amorphous layer on a PS sur face by formation of low-resistive ohmic contact was studied, The rect ifying properties of aluminum contacts to high-resistive porous silico n of p- and n-type were described The appearance of blocking transitio ns results from the full or partial depletion of dopant in mono-crysta l PS matrix, It was demonstrated, that in a number of cases the ohmic contact to the high-resistive porous silicon on the n-type substrates may be created.