FREQUENCY-DEPENDENT ADMITTANCE ANALYSIS ON AMORPHOUS-SILICON PHOTODETECTORS FOR INTEGRATED OPTICAL WAVE-GUIDES

Authors
STEINER K KUHNER G EBERHARD D WAGNER E
Citation
K. Steiner et al., FREQUENCY-DEPENDENT ADMITTANCE ANALYSIS ON AMORPHOUS-SILICON PHOTODETECTORS FOR INTEGRATED OPTICAL WAVE-GUIDES, Sensors and actuators. B, Chemical, 29(1-3), 1995, pp. 423-427
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
29
Issue
1-3
Year of publication
1995
Pages
423 - 427
Database
ISI
SICI code
0925-4005(1995)29:1-3<423:FAAOAP>2.0.ZU;2-7
Abstract
Amorphous silicon photodetectors are attractive transducers for integr ated optical devices on dielectrics. Frequency-dependent admittance an alysis is used to analyze the material properties of such detectors. T he photodetectors are laterally coupled to channel waveguides in glass substrates. Admittance values are recalculated using a six element sm all-signal equivalent circuit model. Space charge capacitances, series resistances, residual contact conductances and inductive reactance co ntributions are evaluated for 633 nm TE and TM modes as well as for da rk current conditions.