NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES

Authors
CRICENTI A NESTERENKO B PERFETTI P LELAY G SEBENNE C
Citation
A. Cricenti et al., NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES, Surface review and letters, 2(5), 1995, pp. 573-577
Citations number
24
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
2
Issue
5
Year of publication
1995
Pages
573 - 577
Database
ISI
SICI code
0218-625X(1995)2:5<573:NESOCS>2.0.ZU;2-4
Abstract
The electronic properties of a clean Si(110)-''16 x 2'' surface have b een studied by angle-reserved ultraviolet photoelectron spectroscopy ( ARUPS) and surface differential reflectivity (SDR). Four surface state s have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR expe riments revealed transitions between filled and empty surface states a t similar to 1.8, 2.4, and 2.9 eV. The results are explained on the ba sis of a new structural model of the Si(110)-''16 x 2'' phase.