PLANAR INP-INGAAS SINGLE-GROWTH AVALANCHE PHOTODIODES WITH NO GUARD RINGS

Authors
TAROF LE BRUCE R KNIGHT DG YU J KIM HB BAIRD T
Citation
Le. Tarof et al., PLANAR INP-INGAAS SINGLE-GROWTH AVALANCHE PHOTODIODES WITH NO GUARD RINGS, IEEE photonics technology letters, 7(11), 1995, pp. 1330-1332
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
11
Year of publication
1995
Pages
1330 - 1332
Database
ISI
SICI code
1041-1135(1995)7:11<1330:PISAPW>2.0.ZU;2-W
Abstract
A novel single-growth planar avalanche photodiode (APD) structure with out guard rings is described. InP-InGaAs separate absorption, charge s heet, grading, and multiplication (SAGCM) APD's have been fabricated u sing the new edge break-doun suppression method. A very low, dark curr ent of 0.6 nA at 0.98 of the breakdown voltage (BV) was measured for a 30-mu m-diameter device, The maximum -3-dB electrical bandwidth was 6 .1 GHz, and in the absence of obvious inductive peaking.