A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110)

Authors
TAVERNER AE GULINO A EGDELL RG TATE TJ
Citation
Ae. Taverner et al., A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110), Applied surface science, 90(3), 1995, pp. 383-387
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
90
Issue
3
Year of publication
1995
Pages
383 - 387
Database
ISI
SICI code
0169-4332(1995)90:3<383:APOEIS>2.0.ZU;2-8
Abstract
Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region, The Sb dopant quenches an electronic state at ab out 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s-5p hybrid orbital locali sed on surface Sb ions.