Ak. Freire et al., ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS ALXGA1-XAS HETEROJUNCTIONS/, Superlattices and microstructures, 17(4), 1995, pp. 351-354
A theoretical model is proposed to describe doped nonabrupt GaAs/AlxGa
1-xAs heterojunctions. It is used to study interface effects on the tr
ansmission properties and energy levels of electrons in these heterost
ructures. It is showed that interface effects are important in the cas
e of high doping levels, and wide GaAs/AlxGa1-xAs interfaces. (C) 1995
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