ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS ALXGA1-XAS HETEROJUNCTIONS/

Authors
FREIRE AK RIBEIRO J FARIAS GA FREIRE VN
Citation
Ak. Freire et al., ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS ALXGA1-XAS HETEROJUNCTIONS/, Superlattices and microstructures, 17(4), 1995, pp. 351-354
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
17
Issue
4
Year of publication
1995
Pages
351 - 354
Database
ISI
SICI code
0749-6036(1995)17:4<351:ALAIEI>2.0.ZU;2-N
Abstract
A theoretical model is proposed to describe doped nonabrupt GaAs/AlxGa 1-xAs heterojunctions. It is used to study interface effects on the tr ansmission properties and energy levels of electrons in these heterost ructures. It is showed that interface effects are important in the cas e of high doping levels, and wide GaAs/AlxGa1-xAs interfaces. (C) 1995 Academic Press Limited