THE INFLUENCE OF INTERFACIAL GROWTH-PATTERNS ON THE TRANSMISSION PROPERTIES OF CARRIERS THROUGH NONABRUPT GAAS ALXGA1-XAS SINGLE BARRIERS/

The influence of interfacial growth patterns on the tunelling of carri ers through nonabrupt GaAs/AlxGa1-xAs single barriers is studied. Five interfacial growth patterns are considered, ail of them representativ e of interfacial alloy variations generated by different growth techni ques. With a generalization of the scheme proposed previously by Freir e et al [Superlatt. Microstruct. 1, 17 (1992)], the inter-related sing le barrier potential and effective mass is obtained. The envelope func tion equation with a position dependent kinetic energy operator is sol ved with a multistep scheme. The position of the resonant peaks, their peak-to-valley ratios, and the mean width of the resonance structures are shown to depend on the interfacial growth patterns. (C) 1995 Acad emic Press Limited