Yt. Rebane et Jw. Steeds, TOPOLOGICAL INTERACTION OF COULOMBIC IMPURITY CENTERS WITH DISLOCATIONS IN SEMICONDUCTORS, Physical review letters, 75(20), 1995, pp. 3716-3719
A phenomenon of the topological interaction of impurities with disloca
tions was studied theoretically. It was found that this interaction re
duces the binding energies of carriers to Coulombic impurities for off
-center valleys in semiconductors by more than a factor of 2 in the ca
se of an isotropic carrier mass and by a factor of 4 in the case of hi
ghly anisotropic valleys.