TOPOLOGICAL INTERACTION OF COULOMBIC IMPURITY CENTERS WITH DISLOCATIONS IN SEMICONDUCTORS

Authors
REBANE YT STEEDS JW
Citation
Yt. Rebane et Jw. Steeds, TOPOLOGICAL INTERACTION OF COULOMBIC IMPURITY CENTERS WITH DISLOCATIONS IN SEMICONDUCTORS, Physical review letters, 75(20), 1995, pp. 3716-3719
Citations number
14
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
75
Issue
20
Year of publication
1995
Pages
3716 - 3719
Database
ISI
SICI code
0031-9007(1995)75:20<3716:TIOCIC>2.0.ZU;2-H
Abstract
A phenomenon of the topological interaction of impurities with disloca tions was studied theoretically. It was found that this interaction re duces the binding energies of carriers to Coulombic impurities for off -center valleys in semiconductors by more than a factor of 2 in the ca se of an isotropic carrier mass and by a factor of 4 in the case of hi ghly anisotropic valleys.