A NEW CAPACITOR TECHNOLOGY-BASED ON POROUS SILICON

Standard microelectronic fabrication techniques have been used to make a capacitor based on an electrochemically etched macroporous silicon substrate and a layered dielectric. This solid-state technology allows a specific capacitance value that can only be reached by electrolytic capacitors. The dependence of the capacitance on temperature, frequen cy, applied bias, and time of operation was compared to other capacito r technologies. This capacitor is fully compatible with surface mounte d device (SMD) and multichip module (MCM) technologies.