DAMAGE PROPERTIES OF ZNGEP2 AT 2-MU-M

Damage thresholds at 2 mu m exceeding 10 J/cm(2) were measured in ZnGe P2 witness samples representing a range of growth runs and surface tre atments. Samples grown more recently were more robust, but clear corre lations between damage properties and surface quality, coating type, o r incident polarization were not observed. Variation in damage thresho ld both within individual samples and between samples was quite large. Comparison with uncoated diffusion-bonded and single-wafer GaAs shows that uncoated ZnGeP2 damages at slightly lower energy density than do es GaAs (approximately 4 J/cm(2) versus 5.5 J/cm(2), respectively). (C ) 1995 Optical Society of America