The photochemical dry etching of doped and undoped silicon oxides with
ClF3 and F-2 gas has been investigated. Etching rates of several hund
red angstroms per minute have been achieved with bulk substrate temper
atures below 300 degrees C. Borophosphosilicate glass-to-thermal oxide
etching rate selectivity is near 1-to-1 over a wide range of process
conditions; The addition of Cl-2 gas is found to significantly reduce
the etching rates of both doped and undoped silicon oxide under these
conditions. The photochemical dry cleaning of a 10 to 20 A chemical ox
ide layer from trench and via bottoms is discussed.