CU CVD FROM COPPER(II) HEXAFLUOROACETYLACETONATE .1. A COLD-WALL REACTOR DESIGN, BLANKET GROWTH-RATE, AND NATURAL SELECTIVITY

An atmospheric pressure cold wall reactor was designed and built for t he purpose of studying the thermal decomposition of Cu(hfa)(2) as a re pair technique for broken copper interconnection lines, using thermall y biased substrates, and a laser to heat localized areas to a temperat ure appropriate for the deposition of pure copper. In this paper, a di scussion of the design is presented, and theoretical and experimental blanket copper deposition growth rates in argon and forming gas are di scussed. The primary goals of the present work were the design of the system, the determination of blanket growth rate characteristics, and examination of the tendency for ''natural selectivity'' to occur on tw o contiguous dielectric materials, SiO2 and polyimide. In studies of n atural selectivity, deposition was observed on SiO2, but not on contig uous polyimide at substrate temperatures of 340 degrees C down to 270 degrees C or lower, using argon as a carrier/diluent, and from 270 deg rees C down to 150 degrees C, using argon/hydrogen mixtures (9:1) as a carrier/diluent.