ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING

Citation
B. Alkan et al., ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING, Semiconductor science and technology, 10(11), 1995, pp. 1458-1462
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
11
Year of publication
1995
Pages
1458 - 1462
Database
ISI
SICI code
0268-1242(1995)10:11<1458:EIGDTP>2.0.ZU;2-P
Abstract
Theoretical studies so far on piezoelectric scattering have resulted i n a mobility behaviour of mu similar to T--1/2 in which mu continues t o fall indefinitely with increasing temperature T. Such a behaviour ca nnot tell us where this scattering will become unimportant, as might b e expected on physical grounds, The correct behaviour should be a fall ing curve first, followed by a gradually increasing one when the scatt ering ceases to be effective. In this work, by using the force-force c orrelation function technique within the linear response formalism, we obtained a mu versus T curve that shows just this behaviour.