OPTICAL NONLINEARITY DUE TO CARRIER SEPARATION IN TENSILE-STRAINED INGAAS INP QUANTUM-WELLS/

Authors
KNORR C GFRORER O HARLE V SCHOLZ F HANGLEITER A
Citation
C. Knorr et al., OPTICAL NONLINEARITY DUE TO CARRIER SEPARATION IN TENSILE-STRAINED INGAAS INP QUANTUM-WELLS/, Semiconductor science and technology, 10(11), 1995, pp. 1484-1488
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
11
Year of publication
1995
Pages
1484 - 1488
Database
ISI
SICI code
0268-1242(1995)10:11<1484:ONDTCS>2.0.ZU;2-W
Abstract
We report on nonlinear optical absorption at the band edge of tensile strained In1-xGaxAs/InP MQW structures. While at low strain the well k nown exciton bleaching is observed, a new nonlinearity dominates at hi gh tensile strain, where the conduction band discontinuity becomes ver y small. Calculations of the spatial band diagram with and without opt ical pumping show that charge-carrier-induced band bending and localiz ation of the previously poorly confined n = 1 electron wavefunction le ads to enhanced absorption at the band edge. We find a good agreement between experimental results and theory.