FAR-INFRARED SPECTROSCOPY OF LATERALLY CONFINED ELECTRON-SYSTEMS ON HG1-XCDXTE

In order to confine quasi two-dimensional electron systems (PDES) on H g1-xCdxTe laterally, we prepared metal-oxide-semiconductor (MOS) struc tures with accessory comb-shaped electrodes buried in the insulator. I n these dual-stacked gate devices we can propel the electron gas from a 2DES, over a density-modulated system, to a 1DES. Accordingly, the f ar-infrared spectra exhibit subband cyclotron resonances, magnetoplasm ons and 1D intersubband shifted cyclotron resonances in the three diff erent regimes. Lateral quantization energies of the 1DES of up to 9 me V are observed. We find that fixed, chargeable states at the Hg1-xCdxT e/insulator interface play a significant role in the lateral confineme nt of the electron gas.