RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS

Authors
KRISHNAMOORTHY AV WOODWARD TK NOVOTNY RA GOOSSEN KW WALKER JA LENTINE AL DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D DAHRINGER D CHIROVSKY LMF APLIN GF ROZIER RG KIAMILEV FE MILLER DAB
Citation
Av. Krishnamoorthy et al., RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS, Electronics Letters, 31(22), 1995, pp. 1917-1918
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
22
Year of publication
1995
Pages
1917 - 1918
Database
ISI
SICI code
0013-5194(1995)31:22<1917:ROWOAE>2.0.ZU;2-T
Abstract
Loaded and unloaded ring-oscillator circuits with an electrical and su rface-normal 850 nm optical readout are fabricated using a hybrid 0.8 mu m silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscilla tion frequency of these circuits show total capacitance associated wit h the flip-chip-bonded optical MQW modulators as low as 52fF.