BENIGN MECHANISM GIVING RISE TO KINKS IN GAAS-MESFET AND HEMT I(V) CHARACTERISTICS

Authors
LADBROOKE PH BRIDGE JP
Citation
Ph. Ladbrooke et Jp. Bridge, BENIGN MECHANISM GIVING RISE TO KINKS IN GAAS-MESFET AND HEMT I(V) CHARACTERISTICS, Electronics Letters, 31(22), 1995, pp. 1947-1948
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
22
Year of publication
1995
Pages
1947 - 1948
Database
ISI
SICI code
0013-5194(1995)31:22<1947:BMGRTK>2.0.ZU;2-C
Abstract
Kinks in GaAs MESFET and HEMT I(V) characteristics may arise from a ch ange in the depletion layer dimensions caused by redistribution of the two-dimensional electric field when the space-charge layer reaches th e drain-side recess edge. The mechanism is benign in that it does not question material quality and growth.