ETCHING PROCESSES FOR OPTOELECTRONIC DEVICES EMPLOYING PERIODIC MULTILAYERS OF INGAAS INALAS/

Authors
ASHBY CIH HOWARD AJ VAWTER GA BRIGGS RD HAFICH MJ
Citation
Cih. Ashby et al., ETCHING PROCESSES FOR OPTOELECTRONIC DEVICES EMPLOYING PERIODIC MULTILAYERS OF INGAAS INALAS/, Electronics Letters, 31(22), 1995, pp. 1948-1950
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
22
Year of publication
1995
Pages
1948 - 1950
Database
ISI
SICI code
0013-5194(1995)31:22<1948:EPFODE>2.0.ZU;2-6
Abstract
Nonselective reactive ion beam etching (RIBE) using Cl-2/Ar mixtures a t elevated temperatures and two isotropic wet chemistries (HCl/HNO3/H2 O2 and HCl/H2O2/H2O) have been developed for fabricating 1.3 mu m opti cal transmission modulators employing periodic multilayers of InGaAs/I nAlAs.