HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING())

Authors
LIOU BW LEE CL LEI TF
Citation
Bw. Liou et al., HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING()), Electronics Letters, 31(22), 1995, pp. 1950-1951
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
22
Year of publication
1995
Pages
1950 - 1951
Database
ISI
SICI code
0013-5194(1995)31:22<1950:HBVSDU>2.0.ZU;2-B
Abstract
A new Schottky diode structure which uses the p(+)-polycrystalline sil icon (polysilicon) diffused guard ring is proposed. The diode gives ne arly ideal J-V characteristics with a high reverse breakdown voltage ( 148V) and a low reverse leakage current density (8.4 mu A/cm(2)).