LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS

Authors
KRUPPA W BINARI SC DOVERSPIKE K
Citation
W. Kruppa et al., LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS, Electronics Letters, 31(22), 1995, pp. 1951-1952
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
22
Year of publication
1995
Pages
1951 - 1952
Database
ISI
SICI code
0013-5194(1995)31:22<1951:LDCOGH>2.0.ZU;2-U
Abstract
The low-frequency transconductance and output resistance of AlN/GaN HF ETs have been examined as functions of temperature. Dispersive charact eristics were found which are indicative of trapping activity in the G aN channel layer. Traps with an activation energy near 1 eV were evide nt.