SECONDARY DEFECT ANNIHILATION IN ION-BEAM PROCESSED SIXGE1-X LAYERS USING TITANIUM SILICIDE

The secondary defect annihilation titanium silicidation in Si(x)Gel(1- x) layers, formed by high dose Ge implantation in (100) silicon, has b een studied systematically as a function of the Ge fluence, implantati on energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate th e damaged SixGe1-x layer recovery and to monitor the germanium diffusi on and reaction during the silicidation. For the highest fluence of 3X 10(16) Ge/cm(2) (approximate to 15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low-temperature silicidation step. After a second high-tempe rature silicidation step all residual defects have been removed. For f luences lower than 3x10(16) Ge/cm(2) a complete recovery is already ob tained after the first silicidation step. (C) 1995 American Institute of Physics.