GROWTH OF ZNSE MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/

Authors
TERAGUCHI N MOURI H TOMOMURA Y TANIGUCHI H RORISON J DUGGAN G
Citation
N. Teraguchi et al., GROWTH OF ZNSE MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(20), 1995, pp. 2945-2947
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
20
Year of publication
1995
Pages
2945 - 2947
Database
ISI
SICI code
0003-6951(1995)67:20<2945:GOZMSS>2.0.ZU;2-6
Abstract
Growth of ZnSe/MgS strained-layer superlattices (SLSs) has been carrie d out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photolumi nescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. (C) 1995 Ameri can Institute of Physics.