BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/

Citation
S. Charbonneau et al., BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/, Applied physics letters, 67(20), 1995, pp. 2954-2956
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
20
Year of publication
1995
Pages
2954 - 2956
Database
ISI
SICI code
0003-6951(1995)67:20<2954:BTOIIL>2.0.ZU;2-B
Abstract
The technique of ion-induced quantum well intermixing using broad area , high energy (1 MeV P+) ion implantation has been used to tune the em ission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 mu m. The optical quality of the band-gap shif ted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold cur rent density and external quantum efficiency and exhibit blue shifts i n the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integra ting active as well as passive optoelectronic devices. (C) 1995 Americ an Institute of Physics.