BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/

The technique of ion-induced quantum well intermixing using broad area , high energy (1 MeV P+) ion implantation has been used to tune the em ission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 mu m. The optical quality of the band-gap shif ted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold cur rent density and external quantum efficiency and exhibit blue shifts i n the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integra ting active as well as passive optoelectronic devices. (C) 1995 Americ an Institute of Physics.