S. Charbonneau et al., BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/, Applied physics letters, 67(20), 1995, pp. 2954-2956
The technique of ion-induced quantum well intermixing using broad area
, high energy (1 MeV P+) ion implantation has been used to tune the em
ission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW)
laser operating at 1.5 mu m. The optical quality of the band-gap shif
ted material is assessed using low-temperature photoluminescence (PL).
The band-gap tuned lasers are characterized in terms of threshold cur
rent density and external quantum efficiency and exhibit blue shifts i
n the lasing spectra of up to 63 nm. This approach offers the prospect
of a powerful and relatively simple fabrication technique for integra
ting active as well as passive optoelectronic devices. (C) 1995 Americ
an Institute of Physics.