PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES

The gettering behavior of Cu and Fe in ion beam synthesized silicon on insulator (SOI) material incorporating a buried oxide layer is invest igated before and after the formation of deep gettering zones by eithe r C or He implantation. Secondary ion mass spectroscopy (SIMS) analysi s is employed to obtain information as to the C, O, Fe, and Cu depth d istributions. It is shown that the proximity gettering approach using C and He renders the possibility of removing and stabilizing metal con taminants not only away from the near-surface region, but also remote from the buried oxide/substrate interface to which they normally segre gate in the absence of efficient implantation induced gettering sinks. C implants are found to have better gettering efficiency as they gett er both Cu and Fe whereas He implants getter Cu only. In addition, the C implant dose needed to achieve one and the same gettering effect is an order of magnitude lower than the He dose. (C) 1995 American Insti tute of Physics.